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IRHNJ64130 - (IRHNJ6x130) MOSFET

Download the IRHNJ64130 datasheet PDF. This datasheet also covers the IRHNJ68130 variant, as both devices belong to the same (irhnj6x130) mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sing.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHNJ68130_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHNJ63130 N-Channel MOSFET
IRHNJ63134 RADIATION HARDENED POWER MOSFET
IRHNJ63230 RADIATION HARDENED POWER MOSFET
IRHNJ67130 Radiation Hardened Power MOSFET
IRHNJ67134 RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 95816 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ67130 100K Rads (Si) IRHNJ63130 IRHNJ64130 300K Rads (Si) 600K Rads (Si) TM IRHNJ67130 100V, N-CHANNEL TECHNOLOGY RDS(on) 0.042Ω 0.042Ω 0.042Ω 0.042Ω ID 22A* 22A* 22A* 22A* IRHNJ68130 1000K Rads (Si) SMD-0.5 International Rectifier’s R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).