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IRHNA63160 - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sing.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHNA63164 POWER MOSFET
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IRHNA67160 RADIATION HARDENED POWER MOSFET
IRHNA67164 POWER MOSFET
IRHNA67260 POWER MOSFET

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www.DataSheet4U.com PD - 94299A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA67160 100K Rads (Si) IRHNA63160 300K Rads (Si) RDS(on) 0.01Ω 0.01Ω ID 56A* 56A* IRHNA67160 100V, N-CHANNEL TECHNOLOGY SMD-2 International Rectifier’s R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.