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IRHM7460SE - Radiation Hardened Power MOSFET

Datasheet Summary

Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Features

  • Single event effect (SEE) hardened.
  • Ultra Low RDS(on).
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Electrically isolated.
  • Ceramic eyelets.
  • Light weight.
  • ESD rating: Class 3B per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 500V.
  • ID : 18A.
  • RDS(on),max : 32m.
  • QG, max : 180nC.
  • REF: MIL-PRF-19500/661 Potential.

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Full PDF Text Transcription

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IRHM7460SE (JANSR2N7392) Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) 500V, 18A, N-channel, Rad Hard HEXFET™ Technology PD-91394G Features • Single event effect (SEE) hardened • Ultra Low RDS(on) • Low total gate charge • Simple drive requirements • Hermetically sealed • Electrically isolated • Ceramic eyelets • Light weight • ESD rating: Class 3B per MIL-STD-750, Method 1020 Product Summary • BVDSS: 500V • ID : 18A • RDS(on),max : 32m • QG, max : 180nC • REF: MIL-PRF-19500/661 Potential Applications • DC-DC converter • Motor drives Product Validation TO-254AA Low Ohmic Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.
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