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IRHM7160 - Radiation Hardened Power MOSFET

Datasheet Summary

Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Features

  • Single event effect (SEE) hardened.
  • Low RDS(on).
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Electrically isolated.
  • Ceramic eyelets.
  • ESD rating: Class 3B per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 100V.
  • ID : 35A.
  • RDS(on),max : 45m (100 krad(Si)).
  • QG,max : 310nC.
  • REF: MIL-PRF-19500/663 Potential.

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Datasheet preview – IRHM7160

Datasheet Details

Part number IRHM7160
Manufacturer International Rectifier
File Size 1.35 MB
Description Radiation Hardened Power MOSFET
Datasheet download datasheet IRHM7160 Datasheet
Additional preview pages of the IRHM7160 datasheet.

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Full PDF Text Transcription

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IRHM7160 (JANSR2N7432) Radiation Hardened Power MOSFET Thru-Hole (TO-254AA) 100V, 35A, N-channel, Rad Hard HEXFET™ Technology PD-91331G Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Simple drive requirements  Hermetically sealed  Electrically isolated  Ceramic eyelets  ESD rating: Class 3B per MIL-STD-750, Method 1020 Product Summary  BVDSS: 100V  ID : 35A  RDS(on),max : 45m (100 krad(Si))  QG,max : 310nC  REF: MIL-PRF-19500/663 Potential Applications  DC-DC converter  Motor drives TO-254AA Product Validation Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.
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