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PD-93798B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
IRHM57264SE 250V, N-CHANNEL
5 TECHNOLOGY
Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si)
RDS(on) ID 0.066Ω 35A*
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHM57264SE Datasheet
