IRHM57064 - (IRHM5x064) RADIATION HARDENED POWER MOSFET
Datasheet Summary
Features
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Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Di.
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PD - 93792D
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) IRHM54064 IRHM58064 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.012Ω 0.012Ω 0.012Ω 0.013Ω ID 35A* 35A* 35A* 35A*
IRHM57064 60V, N-CHANNEL
5
TECHNOLOGY
TO-254AA
International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
IRHM57064 Datasheet
