IRHM53Z60 - (IRHM5xZ60) RADIATION HARDENED POWER MOSFET THRU-HOLE
This page provides the datasheet information for the IRHM53Z60, a member of the IRHM57Z60 (IRHM5xZ60) RADIATION HARDENED POWER MOSFET THRU-HOLE family.
Datasheet Summary
Features
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Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Curr.
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PD - 93786B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level RDS(on) IRHM57Z60 100K Rads (Si) 0.0095Ω IRHM53Z60 300K Rads (Si) 0.0095Ω IRHM54Z60 IRHM58Z60 600K Rads (Si) 1000K Rads (Si) 0.0095Ω 0.010Ω ID 35A* 35A* 35A* 35A*
IRHM57Z60 30V, N-CHANNEL
4 #
TECHNOLOGY
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TO-254AA
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
IRHM53Z60 Datasheet
