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IRHM3Z60 - RADIATION HARDENED POWER MOSFET THRU-HOLE

This page provides the datasheet information for the IRHM3Z60, a member of the IRHM8Z60 RADIATION HARDENED POWER MOSFET THRU-HOLE family.

Datasheet Summary

Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalan.

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Datasheet Details

Part number IRHM3Z60
Manufacturer International Rectifier
File Size 159.67 KB
Description RADIATION HARDENED POWER MOSFET THRU-HOLE
Datasheet download datasheet IRHM3Z60 Datasheet
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www.datasheet4u.com PD - 91701B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si) RDS(on) 0.014Ω 0.014Ω 0.014Ω 0.014Ω ID 35*A 35*A 35*A 35*A IRHM7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY ™ ® TO-254AA International Rectifier’s RAD-Hard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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