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IRHLYS77034CM - RADIATION HARDENED LOGIC LEVEL POWER MOSFET

Key Features

  • n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLYS797034CM Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC =100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating F.

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Part Number Description
IRHLYS797034CM RADIATION HARDENED LOGIC LEVEL POWER MOSFET
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PD-97291 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number IRHLYS77034CM IRHLYS73034CM Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 20A* 20A* 2N7607T3 IRHLYS77034CM 60V, N-CHANNEL TECHNOLOGY ™ Low-Ohmic TO-257AA International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.