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IRHLNA797064 - (IRHLNA79x064) POWER MOSFET

This page provides the datasheet information for the IRHLNA797064, a member of the IRHLNA793064 (IRHLNA79x064) POWER MOSFET family.

Datasheet Summary

Features

  • n n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @VGS = -4.5V,TC = 25°C ID @VGS = -4.5V,TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Sour.

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Full PDF Text Transcription

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www.DataSheet4U.com PD-97174A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHLNA797064 100K Rads (Si) IRHLNA793064 300K Rads (Si) RDS(on) 0.015Ω 0.015Ω ID -56A* -56A* 2N7622U2 IRHLNA797064 60V, P-CHANNEL TECHNOLOGY ™ SMD-2 International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
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