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IRHLG770Z4 - (IRHLG7x0Z4) POWER MOSFET

Download the IRHLG770Z4 datasheet PDF. This datasheet also covers the IRHLG730Z4 variant, as both devices belong to the same (irhlg7x0z4) power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Complimentary P-Channel Available IRHLG7970Z4 Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dis.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHLG730Z4_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHLG77110 100V 100kRad Hi-Rel Quad N-Channel TID Hardened MOSFET
IRHLG730Z4 (IRHLG7x0Z4) POWER MOSFET
IRHLG73110 Power MOSFET
IRHLG73214 Power MOSFET
IRHLG7670Z4 60V 100kRad Hi-Rel Dual 2N 2P Channel TID Hardened MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD-95865 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) ID IRHLG770Z4 100K Rads (Si) 0.6Ω 1.07A IRHLG730Z4 300K Rads (Si) 0.6Ω 1.07A IRHLG770Z4 60V, Quad N-CHANNEL TECHNOLOGY ™ MO-036AB International Rectifier’s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.