Datasheet Details
| Part number | IRGBC30K-S |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 186.30 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet |
 IRGBC30K-S Datasheet
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General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
Key Features
- Short circuit rated - 10µs @ 125°C, V GE = 15V.
- Switching-loss rating includes all "tail" losses.
- Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast Fast IGBT VCES = 600V VCE(sat) ≤ 3.8V @VGE = 15V, I C = 14A n-channel.