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IRGB5B120KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA. www. DataSheet4U. com.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • TO-220 Package.
  • Lead-Free C VCES = 1200V IC = 6.0A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 2.75V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. www.DataSheet4U.com • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 Package. • Lead-Free C VCES = 1200V IC = 6.0A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 2.75V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.