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IRGB4B60KPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES = 600V IC = 6.8A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95643A INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES = 600V IC = 6.8A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 2.
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