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IRG7PH50UPBF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRG7PH50UPBF datasheet PDF. This datasheet also covers the IRG7PH50U-EP variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free C IRG7PH50UPbF IRG7PH50U-EP VCES = 1200V IC = 90A, TC = 100°C G E TJ(max) =175°C n-channel VCE(on) typ. = 1.7V Benefits.
  • High efficiency in a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRG7PH50U-EP-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH50K10D-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH50K10DPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH28UD1PBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 97549 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free C IRG7PH50UPbF IRG7PH50U-EP VCES = 1200V IC = 90A, TC = 100°C G E TJ(max) =175°C n-channel VCE(on) typ. = 1.7V Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation C C GC E Applications • • • • U.P.
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