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IRG4RC20F - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs.
  • Industry standard TO-252AA package.
  • Combines very low VCE(on) with low switching losses C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.82V @VGE = 15V, IC = 12A N-channel Benefits.
  • Generation 4 IGBTs offer highest efficie.

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PD - 91731A IRG4RC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs. • Industry standard TO-252AA package • Combines very low VCE(on) with low switching losses C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.