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IRG4PSC71U - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations.
  • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247.
  • Creepage distance increased to 5.35mm C UltraFast Speed IGBT VCES.

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Full PDF Text Transcription

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PD - 91681A IRG4PSC71U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.35mm C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.
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