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PD- 91579A
IRG4PH30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
C
Short Circuit Rated UltraFast IGBT
VCES = 1200V
G E
VCE(on) typ. = 3.10V
@VGE = 15V, IC = 10A
n-ch an nel
Benefits
• Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs.
IRG4PH30KD Datasheet
