Datasheet4U Logo Datasheet4U.com

IRG4PC40UPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-247AC package.
  • Lead-Free C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A n-channel Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for spe.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4PC40U INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC40UD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC40F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4PC40UDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40FDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40FPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40KDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40KPBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
PD-95184 IRG4PC40UPbF INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.
Published: |