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PD-94810A
IRG4BC30UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast CoPack IGBT
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry standard TO-220AB package
Lead-Free
C
G E
n-channel
VCES = 600V VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A
Benefits
Generation -4 IGBT's offer highest efficiencies available
IGBTs optimized for specific application conditions HEXFRED diodes optimized for performance with
IGBTs .
IRG4BC30UDPBF Datasheet
