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IRG4BC30KPBF - UltraFast IGBT

Features

  • • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Lead-Free IRG4BC30KPbF Short Circuit Rated UltraFast IGBT C VCES = 600V G E n-channel VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A Benefits • As a Freewheeling Diode we recommend our.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95641A INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Lead-Free IRG4BC30KPbF Short Circuit Rated UltraFast IGBT C VCES = 600V G E n-channel VCE(on) typ. = 2.
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