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IRFU3806PbF - Power MOSFET

Download the IRFU3806PbF datasheet PDF. This datasheet also covers the IRFR3806PbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • on temperature, not to exceed Tjmax (assumed as 20 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
  • f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3.
  • BV.
  • Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
  • BV.
  • Zth] EAS (AR) = PD (ave).
  • tav Fig 15. Maximum Avalanche Energy vs. Temperature www. irf. com 5 IRR (A) VGS(th) , Gate threshold Voltag.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR3806PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU3806 N-Channel MOSFET INCHANGE
IRFU310 Power MOSFET Vishay Siliconix
IRFU310 N-Channel MOSFET INCHANGE
IRFU310A Power MOSFET Fairchild Semiconductor
IRFU310B 400V N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFU310 Power MOSFET
IRFU320 Power MOSFET
IRFU3303 HEXFET Power MOSFET
IRFU3303PBF HEXFET Power MOSFET
IRFU3410 Power MOSFET

Full PDF Text Transcription

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dv/dt Peak Diode Recovery e TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
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