IRFSL4020PbF
Features
- Key parameters optimized for Class-D audio amplifier applications
- Low RDSON for improved efficiency
- Low QG and QSW for better THD and improved efficiency
- Low QRR for better THD and lower EMI
- 175°C operating junction temperature for ruggedness
- Can deliver up to 300W per channel into 8Ω load in
Key Parameters
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ.
200 85 18 6.7
RG(int) typ. TJ max
3.2 175
V mΩ n C n C
Ω °C half-bridge configuration amplifier
DS G
DS G
D2Pak IRFS4020Pb F
TO-262 IRFSL4020Pb F
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET...
