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IRFSL3607PBF - Power MOSFET

Download the IRFSL3607PBF datasheet PDF. This datasheet also covers the IRFB3607PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • h 150 125 100 75 50 25 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 46A Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below base.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFB3607PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRFSL3107PbF N-Channel MOSFET INCHANGE
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IRFSL3207 HEXFET Power MOSFET IRF
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFSL3004PBF Power MOSFET
IRFSL3006PbF Power MOSFET
IRFSL3107PbF Power MOSFET
IRFSL31N20DPBF Power MOSFET
IRFSL3206 Power MOSFET

Full PDF Text Transcription

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PD - 97308C Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFB3607PbF IRFS3607PbF IRFSL3607PbF HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S VDSS RDS(on) typ. max. ID D 75V 7.34m: 9.
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