IRFS4115
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and Dynamic d V/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode d V/dt and d I/dt Capability l Lead-Free
- 96198A
IRFS4115Pb F IRFSL4115Pb F
HEXFET® Power MOSFET
D VDSS RDS(on) typ. max.
150V
10.3m: 12.1m:
ID (Silicon Limited) c 99A
S ID (Package Limited) 195A
S G D2Pak IRFS4115Pb F
S D G TO-262 IRFSL4115Pb F
G Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited) d Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage f Peak Diode Recovery
Operating...
