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IRFS3507 - (IRFx3507) HEXFET Power MOSFET

Download the IRFS3507 datasheet PDF. This datasheet also covers the IRFB3507 variant, as both devices belong to the same (irfx3507) hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
  • f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3.
  • BV.
  • Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
  • BV.
  • Zth] E.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFB3507_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFS3507 Power MOSFET IRF
IRFS350 Power MOSFET Fairchild Semiconductor
IRFS350A N-Channel MOSFET Transistor Inchange Semiconductor
IRFS350A Power MOSFET Fairchild Semiconductor
IRFS350A Advanced Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFS3004-7PPbF Power MOSFET
IRFS3004PBF Power MOSFET
IRFS3006-7PPbF Power MOSFET
IRFS3006PbF Power MOSFET
IRFS3107-7PPBF Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com PD - 96903A IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G S HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID 75V 7.0m: 8.
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