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IRFR7746PbF - Power MOSFET

Key Features

  • . Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy RDS(on), Drain-to -Source On Resistance (m) 50.0 45.0 40.0 35.0 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 30.0 25.0 20.0 15.0 10.0 5.0 0 50 100 150 ID, Drain Current (A) 200 Fig 13. Typical On-Resistance vs. Drain Current 5 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014   10 IRFR/U7746PbF Thermal Response ( ZthJC ) °C/W 1 0.1 0.01 D = 0.50 0.20 0.10 0.05.

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Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters   G Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant StrongIRFET™ IRFR7746PbF IRFU7746PbF HEXFET® Power MOSFET D VDSS 75V RDS(on) typ. 9.5m max 11.