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IRFR2407 - Power MOSFET

Download the IRFR2407 datasheet PDF. This datasheet also covers the IRFU2407 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • shown in millimeters (inches) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 3 0 .5 1 (.0 2 0 ) M IN . 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN -B 1 .5 2 (.0.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFU2407_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFR2407 N-Channel MOSFET INCHANGE
IRFR2405 N-Channel MOSFET INCHANGE
IRFR24N15D N-Channel MOSFET INCHANGE
IRFR210 Power MOSFET Vishay Siliconix
IRFR210A Power MOSFET Samsung

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFR2407PbF Power MOSFET
IRFR2405 Power MOSFET
IRFR2405PBF HEXFET Power MOSFET
IRFR24N15D SMPS MOSFET
IRFR24N15DPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD -93862 IRFR2407 IRFU2407 Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D VDSS = 75V G S RDS(on) = 0.026Ω ID = 42A† Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.