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IRFP3703 - Power MOSFET

Features

  • T O -2 4 7 -A C . -C 1 4.80 (.583 ) 1 4.20 (.559 ) 4 .30 (.170 ) 3 .70 (.145 ) 2 .40 (.094) 2 .00 (.079) 2X 5.45 (.21 5) 2X 1 .40 (.056 ) 3X 1 .00 (.039 ) 0 .25 (.010 ) M C A S 3.4 0 (.1 33) 3.0 0 (.1 18) 0 .80 (.031) 3X 0 .40 (.016) 2.60 (.10 2) 2.20 (.08 7) L E A D A S S IG N M E N T S 1 2 3 4 GATE D R A IN SOURCE D R A IN www. DataSheet4U. com.
  • Pulse width ≤ 300µs; duty cycle ≤ 2%. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25.

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Full PDF Text Transcription

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www.DataSheet4U.com PD - 93917A SMPS MOSFET IRFP3703 HEXFET® Power MOSFET Applications l Synchronous Rectification l Active ORing Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated VDSS 30V RDS(on) max 0.0028Ω ID 210A† TO-247AC Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ, TSTG www.DataSheet4U.com Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range Max. 210 † 100 † Units A W W/°C V V/ns °C 1000 230 3.8 1.5 ± 20 5.
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