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IRFM460 - Power MOSFET

Description

HEXFET MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance combined with high trans conductance.

Features

  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Dynamic dv/dt Rating.
  • Light Weight Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diod.

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Part Number Description
IRFM440 POWER MOSFET THRU-HOLE (TO-254AA)
IRFM044 N-Channel Power MOSFET
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Full PDF Text Transcription

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POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) ID IRFM460 0.27 19A PD-90727E IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Description HEXFET MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high trans conductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.
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