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IRFI4410ZPBF - Power MOSFET

Key Features

  • shold Voltage (V) 4.5 ID = 1.0A 4.0 ID = 1.0mA ID = 250μA 3.5 ID = 150μA 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature IRR (A) 16 14 12 10 8 6 IF = 17A 4 VR = 85V 2 TJ = 25°C TJ = 125°C 0 100 200 300 400 500 600 700 diF /dt (A/μs) Fig. 17 - Typical Recovery Current vs. dif/dt IRR (A) 16 14 12 10 8 6 IF = 26A 4 VR = 85V 2 TJ = 25°C TJ = 125°C 0 100 200 300 400 500 600 700 diF /dt (A/μs) Fig.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97475A IRFI4410ZPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits VDSS RDS(on) ID typ. max. Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G D S HEXFET® Power MOSFET 100V 7.9m: 9.