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IRFH7882PBF - Power MOSFET

Description

Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All di

Features

  • Low RDS(ON) (< 3.1m) Low Thermal Resistance to PCB (.

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Full PDF Text Transcription

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VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) ID (@TC (Bottom) = 25°C) 80 3.1 49 0.9 180 V m nC  A   FastIRFET™ IRFH7882PbF HEXFET® Power MOSFET   PQFN 5X6 mm Applications  Optimized for Secondary Side Synchronous Rectification  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Hot Swap and Active O-Ring  BLDC Motor Drive Features Low RDS(ON) (< 3.1m) Low Thermal Resistance to PCB (<0.64°C/W) 100% Rg Tested Low Profile (<1.
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