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IRFH7190PBF - Power MOSFET

Datasheet Summary

Description

Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All di

Features

  • Low RDS(ON) (< 7.5m) Internal Snubber Low Thermal Resistance to PCB (.

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FastIRFET™ IRFH7190PbF VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) ID (@TC (Bottom) = 25°C) 100 7.5 26 1.0 82 V m nC  A   HEXFET® Power MOSFET   PQFN 5X6 mm Applications  Optimized for Secondary Side Synchronous Rectification  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Hot Swap and Active O-Ring  BLDC Motor Drive Features Low RDS(ON) (< 7.5m) Internal Snubber Low Thermal Resistance to PCB (<1.2°C/W) 100% Rg Tested Low Profile (<1.
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