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IRFH5053TR2PBF - HEXFET Power MOSFET

Download the IRFH5053TR2PBF datasheet PDF. This datasheet also covers the IRFH5053PbF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • le ≤ 2%.
  • Rthjc is guaranteed by design … When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFH5053PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRFH4201 Power MOSFET Infineon
IRFH4201PbF Power MOSFET Infineon
IRFH7184PbF Power MOSFET Infineon
IRFH7440PbF Power MOSFET Infineon
IRFH8201PbF MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFH5053TRPBF HEXFET Power MOSFET
IRFH5053PbF HEXFET Power MOSFET
IRFH5004PBF HEXFET Power MOSFET
IRFH5004PBF HEXFET Power MOSFET
IRFH5006PBF HEXFET Power MOSFET

Full PDF Text Transcription

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PD - 97359 IRFH5053PbF Applications l l HEXFET® Power MOSFET 3 Phase Boost Converter Applications Secondary Side Synchronous Rectification VDSS 100V RDS(on) max 18mΩ@VGS = 10V Qg 24nC Benefits l l l l l l l l Very low RDS(ON) at 10V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering D D D D S S S G PQFN Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
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