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PD - 93841
SMPS MOSFET
IRFBL3703
HEXFET® Power MOSFET
Applications l Synchronous Rectification in High Power High Frequency DC/DC Converters
VDSS
30V
RDS(on) max
0.0025Ω
ID
260A
Benefits >1mm lower profile than D2Pak Same footprint as D2Pak Low Gate Impedance to Reduce Switching Losses l Ultra Low On-Resistance l Fully Avalanche Rated
l l l
Super-D2PakTM
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max. 260 180
1000 300 3.8 2.0 ± 20 5.