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PD - 95507
IRFBE30SPbF IRFBE30LPbF
O O O O O O
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free
HEXFET® Power MOSFET
D
VDSS = 800V
G S
RDS(on) = 3.0Ω ID = 4.1A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
D2Pak IRFBE30S TO-262 IRFBE30L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
4.1 2.6 16 125 1.0 ± 20 260 4.1 13 2.
IRFBE30LPBF Datasheet
