IRFB42N20DPBF - HEXFET Power MOSFET

International Rectifier (now Infineon)

Features

e width limited by max. junction temperature.
ISD ≤ 26A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS TJ ≤ 175°C Starting TJ = 25°C, L = 1.45mH RG = 25Ω, IAS = 26A, VGS=10V Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be fou.

IRFB42N20DPBF hexfet power mosfet by International Rectifier - Datasheet Preview

Datasheet Details

Part number	IRFB42N20DPBF
Manufacturer	International Rectifier (now Infineon)
File Size	168.93 KB
Description	HEXFET Power MOSFET
Datasheet	IRFB42N20DPBF Datasheet

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Full PDF Text Transcription

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SMPS MOSFET PD- 95470 IRFB42N20DPbF HEXFET® Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free l VDSS 200V RDS(on) max 0.055Ω ID 44A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Published: May 30, 2007 |