IRFB3256PbF - HEXFET Power MOSFET

Product Overview

International Rectifier

Part number	IRFB3256PbF
Manufacturer	International Rectifier
File Size	264.31 KB
Description	HEXFET Power MOSFET
Datasheet	IRFB3256PbF Datasheet
Additional preview pages of the IRFB3256PbF datasheet.

ower dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 15. Maximum.

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Published: Oct 16, 2015 |