IRF9540NS
Description
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
IRF9540NSPb F IRF9540NLPb F
HEXFET® Power MOSFET
VDSS = -100V
RDS(on) = 117mΩ
ID = -23A
S D G D2Pak IRF9540NSPb F
S D G TO-262 IRF9540NLPb F
G Gate
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V c Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
VGS EAS IAR EAR dv/dt TJ TSTG
Linear Derating Factor
Gate-to-Source Voltage d Single Pulse Avalanche Energy c Avalanche Current c Repetitive Avalanche Energy e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJ...
