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IRF9383MPBF - Power MOSFET

General Description

The IRF9383MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Key Features

  • l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, no Bromide and no Halogen l Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) DirectFET® P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 67nC 29nC 9.4nC 315nC 59nC -1.8V G D S SD MX DirectFET™.

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Other Datasheets by International Rectifier (now Infineon)

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF9383MPbF Applications l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications Features and Benefits l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, no Bromide and no Halogen l Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) DirectFET® P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 67nC 29nC 9.4nC 315nC 59nC -1.8V G D S SD MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.