IRF9383MPBF
Features and Benefits l Environmentaly Friendly Product l Ro Hs pliant Containing no Lead, no Bromide and no Halogen l mon-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
Direct FET® P-Channel Power MOSFET
Typical values (unless otherwise specified)
VDSS
RDS(on)
RDS(on)
-30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
67n C 29n C 9.4n C 315n C 59n C -1.8V
S SD
Direct FET ISOMETRIC
Applicable Direct FET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX
Description
The IRF9383MTRPb F bines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced Direct FET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The Direct FET® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,...
