Datasheet Details
| Part number | IRF7779L2PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 280.60 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF7779L2PBF Datasheet
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Description
achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.
Features
- l Gate Charge (nC) Fig 8. Typical Capacitance vs. Drain-to-Source Voltage Fig 9. Typical Total Gate Charge vs Gate-to-Source Voltage 4 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback May 6, 2014 IRF7779L2PbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C TJ = 25°C TJ = -40°C 10 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage.