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IRF7523D1 - FETKY MOSFET

Description

The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications.

Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • ARTERS: 233 Kansas St. , El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT.

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Other Datasheets by International Rectifier (now Infineon)

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IRF7521D1 FETKY MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 91647C IRF7523D1 FETKY™ MOSFET / Schottky Diode q q q q q Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 8 K K D D VDSS = 30V RDS(on) = 0.11Ω Schottky Vf = 0.39V 2 7 3 6 4 5 Description T op V ie w The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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