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IRF7351PbF - Power MOSFET

Features

  • threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by the power supply input buss voltage. 8.

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Other Datasheets by International Rectifier (now Infineon)

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IRF7351 Power MOSFET
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IRF7350PBF Power MOSFET
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Full PDF Text Transcription

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Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF7351PbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 60V 17.8mΩ@VGS = 10V 24nC Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.
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