IRF7319
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Top View
S O -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
TA = 25°C TA = 70°C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 82 4.0...
