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IRF7309 - HEXFET Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • ms 153 IRF7309 P-Channel Fig 22b. Gate Charge Test Circuit Fig 22b. Basic Gate Charge Waveform N- and P-Channel 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 PDM t SINGLE PULSE (.

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Full PDF Text Transcription

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PD - 9.1243B PRELIMINARY IRF7309 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
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