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IRF6715MTRPbF - Power MOSFET

Download the IRF6715MTRPbF datasheet PDF (IRF6715MPbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF6715MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Features

  • 1. Maximum Safe Operating Area ID, Drain Current (A) 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 900 800 700 600 3.0 Typical VGS(th) Gate threshold Voltage (V) 2.5 2.0 1.5 ID = 100µA ID = 250µA ID = 1.0mA 1.0 ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 2.74A 3.70A BOTTOM 27A EAS , Single Pulse Avala.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6715MPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 96117C IRF6715MPbF IRF6715MTRPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant and Halogen Free l Low Profile (<0.6 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.3mΩ@ 10V 2.1mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching  40nC 12.0nC 5.3nC 37nC 26nC 1.9V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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