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IRF6655 - DirectFET Power MOSFET Typical values

Description

The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile.

Features

  • sec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100msec 10 T J = -40°C T J = 25°C T J = 150°C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) 1 1msec 10msec 0.1 0.01 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 5 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 5.5 5 4.5 4 3.5 ID = 25µA 3 2.5 2 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °.

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PD - 96926D www.DataSheet4U.com DirectFET™ Power MOSFET ‚ l IRF6655 RDS(on) 53mΩ@ 10V RoHS compliant containing no lead or bromide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for High Performance Isolated Converter Primary Switch Socket l Ideal for Control FET sockets in 36V – 75V in Synchronous Buck applications l Low Conduction Losses l Compatible with existing Surface Mount Techniques  Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST SH MQ MX MT Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 2.8nC 100V max ±20V max 8.7nC Vgs(th) 3.
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