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IRF6635TRPbF - DirectFET Power MOSFET

Download the IRF6635TRPbF datasheet PDF. This datasheet also covers the IRF6635PbF variant, as both devices belong to the same directfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • rward Voltage 200 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 175 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain Current (A) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 900 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature 800 700 600 500 400 300 200 100 0 25 50 75 ID 9.1A 11A B.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6635PbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6643TRPbF DIGITAL AUDIO MOSFET IRF
IRF6644PbF IR MOSFET Infineon
IRF6648PbF Power MOSFET Infineon
IRF6648TRPbF Power MOSFET Infineon
IRF6662PbF Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6635 DirectFET Power MOSFET
IRF6635PbF DirectFET Power MOSFET
IRF6631 DirectFET Power MOSFET
IRF6631PBF Power MOSFET
IRF6631TRPBF Power MOSFET

Full PDF Text Transcription

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PD - 97086 IRF6635PbF IRF6635TRPbF www.DataSheet4U.com l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 17nC RDS(on) Qgs2 4.7nC RDS(on) Qoss 29nC 30V max ±20V max 1.3mΩ@ 10V 1.8mΩ@ 4.5V Qrr 48nC Vgs(th) 1.8V 47nC MX Applicable DirectFET Outline and Substrate Outline (see p.
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