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IRF5NJ9540 - P-Channel Power MOSFET

Description

Fifth Generation HEXFET® power MOSFETs from IR HiRel utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.

Features

  • Low RDS(on).
  • Avalanche Energy Ratings.
  • Dynamic dv/dt Rating.
  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Surface Mount.
  • Light Weight.
  • ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IA.

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Full PDF Text Transcription

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HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94038B IRF5NJ9540 100V, P-CHANNEL Product Summary Part Number IRF5NJ9540 BVDSS -100V RDS(on) 0.117 ID -18A Description Fifth Generation HEXFET® power MOSFETs from IR HiRel utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.
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