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IRF3709ZSLPBF - (IRF3709xPbF) HEXFET Power MOSFET

Download the IRF3709ZSLPBF datasheet PDF. This datasheet also covers the IRF3709ZLPBF variant, as both devices belong to the same (irf3709xpbf) hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • ng+ Pdrive+ Poutput This can be expanded and approximated by; ⎛Q ⎞ + ⎜ oss × Vin × f + (Qrr × Vin × f ) ⎠ ⎝ 2.
  • dissipated primarily in Q1. Ploss = (Irms × Rds(on ) ) 2 ⎛ ⎞ ⎛ Qgs 2 Qgd +⎜I× × Vin × f ⎟ + ⎜ I × × Vin × ig ig ⎝ ⎠ ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ f⎟ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The i.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF3709ZLPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free HEXFET® Power MOSFET IRF3709ZPbF IRF3709ZSPbF IRF3709ZLPbF Qg 17nC 6.3m: PD -95465 VDSS RDS(on) max 30V Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3709Z D2Pak IRF3709ZS TO-262 IRF3709ZL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 87 62 Units V A c h h 350 79 40 0.53 -55 to + 175 300 (1.6mm from case) 10 lbf in (1.